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CY62167EV30LL-45BVXI - 

SRAM, 16 Mbit, 1M x 16bit, 2.2V to 3.6V, FBGA, 48 Pins, 45 ns

CYPRESS SEMICONDUCTOR CY62167EV30LL-45BVXI

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Artikelnr. fabrikant:
CY62167EV30LL-45BVXI
Ordercode:
1650072
Technische datasheet:
(EN)
Bekijk alle technische documenten

Productgegevens

:
-40°C
:
2.2V to 3.6V
:
85°C
:
45ns
:
48Pins
:
1M x 16bit
:
16Mbit
:
-
:
-
:
FBGA
:
Each
:
-
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Productoverzicht

The CY62167EV30LL-45BVXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.
  • Ultra-low standby power
  • Ultra-low active power
  • Easy memory expansion with CE1, CE2 and OE
  • Automatic power-down when deselected
  • CMOS for optimum speed/power

Toepassingen

Computers & Computer Peripherals, Consumer Electronics