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INFINEON  IRF7311TRPBF  Dual MOSFET, Dual N Channel, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV

INFINEON IRF7311TRPBF
Technical Data Sheet (1.93MB) EN Bekijk alle technische documenten

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Productoverzicht

The IRF7311TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
  • Generation V technology
  • Ultra low ON-resistance
  • Surface-mount device
  • Fully avalanche rated

Productgegevens

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
6.6A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.023ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Industrial;
  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
Thailand

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000181

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