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INFINEON  IRFR1205TRPBF  MOSFET Transistor, N Channel, 44 A, 55 V, 27 mohm, 10 V, 4 V

INFINEON IRFR1205TRPBF
Technical Data Sheet (393.20KB) EN Bekijk alle technische documenten

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Productoverzicht

The IRFR1205TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
  • Fully avalanche rating
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating

Productgegevens

Transistor Polarity:
N Channel
Continuous Drain Current Id:
44A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.027ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
107W
Transistor Case Style:
TO-252AA
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Toepassingen

  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
Mexico

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000491

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