Low

INFINEON  IRFR9024NTRPBF  MOSFET Transistor, P Channel, -11 A, -55 V, 0.175 ohm, -10 V, -4 V

INFINEON IRFR9024NTRPBF
Technical Data Sheet (1.35MB) EN Bekijk alle technische documenten

De afbeeldingen zijn alleen bedoeld ter illustratie. Raadpleeg de productomschrijving.

Productoverzicht

The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
  • Advanced process technology
  • Fully avalanche rating
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating

Productgegevens

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-11A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.175ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
38W
Transistor Case Style:
TO-252AA
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Zoeken naar vergelijkbare producten  per overeenkomende kenmerken

Toepassingen

  • Automotive;
  • Power Management

Wetgeving en milieu

MSL-niveau voor vochtgevoeligheid:
MSL 1 - Unlimited
Land van oorsprong:
China

Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd

RoHS-compliantie:
Ja
Tariefnummer:
85412900
Gewicht (kg):
.000593