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BQ24610RGET - 

Battery Charger for 6 Cells of Li-Ion, Li-Pol battery, 28V input, 10 A charge, QFN-24

TEXAS INSTRUMENTS BQ24610RGET

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Artikelnr. fabrikant:
BQ24610RGET
Ordercode:
1815718
Technische datasheet:
(EN)
Bekijk alle technische documenten

Productgegevens

:
Li-Ion, Li-Pol
:
-40°C
:
-
:
85°C
:
QFN
:
24Pins
:
28V
:
-
:
6
:
10A
:
Cut Tape
:
MSL 2 - 1 year
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Productoverzicht

The BQ24610RGET is a stand-alone synchronous switch-mode highly integrated Li-ion/Li-polymer Battery Charger offers a constant-frequency synchronous switching PWM controller with high-accuracy charge current and voltage regulation, charge preconditioning, termination, adapter current regulation and charge status monitoring. The BQ2461X charges the battery in three phases such as preconditioning, constant current and constant voltage. Charge is terminated when the current reaches a minimum user-selectable level. A programmable charge timer provides a safety backup. The battery charger automatically restarts the charge cycle if the battery voltage falls below an internal threshold and enters a low quiescent current sleep mode when the input voltage falls below the battery voltage.
  • 600kHz NMOS-NMOS Synchronous buck converter
  • Automatic system power selection from adapter or battery
  • Internal loop compensation and soft start
  • Dynamic power management
  • Input overvoltage protection
  • Battery thermistor sense hot and cold charge suspend
  • Battery detection
  • Reverse protection input FET
  • Programmable safety timer
  • Charge over-current protection
  • Battery short protection
  • Battery overvoltage protection
  • Thermal shutdown
  • Charge enable pin
  • <15µA Off-state battery discharge current
  • <1.5mA Off-state input quiescent current
  • Green product and no Sb/Br

Toepassingen

Power Management, Consumer Electronics, Portable Devices, Medical, Industrial

Waarschuwingen

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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