Low

TPS7A4501DCQT - 

LDO Voltage Regulator, Adjustable, 2.1V to 20V in, 300mV drop, 1.21V to 20V/1.5A out, SOT-223-5

TEXAS INSTRUMENTS TPS7A4501DCQT

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Artikelnr. fabrikant:
TPS7A4501DCQT
Ordercode:
2437857
Technische datasheet:
(EN)
Bekijk alle technische documenten

Productgegevens

:
20V
:
-
:
-40°C
:
1.5A
:
20V
:
125°C
:
5Pins
:
1.21V
:
Adjustable
:
2.1V
:
-
:
-
:
SOT-223
:
Tape & Reel
:
300mV
:
MSL 2 - 1 year
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Productoverzicht

The TPS7A4501DCQT is a Single Output Low-dropout Linear Regulator optimized for fast transient response. The device can supply 1.5A of output current with a dropout voltage of 300mV. Operating quiescent current is 1mA, dropping to less than 1µA in shutdown. Quiescent current is well controlled, it does not rise in dropout as with many other regulators. In addition to fast transient response, the TPS7A4501 regulator has very-low output noise, which makes it ideal for sensitive RF supply applications. Output voltage range is from 1.21 to 20V. The regulator is stable with output capacitance as low as 10µF. Small ceramic capacitors can be used without the necessary addition of ESR as is common with other regulators. Internal protection circuitry includes reverse-battery protection, current limiting, thermal limiting and reverse-current protection. It is available in fixed output voltages of 1.5, 1.8, 2.5, 3.3V and as an adjustable device with a 1.21V reference voltage.
  • Optimized for fast transient response
  • High output voltage accuracy (1% at 25°C)
  • Low noise (35µVRMS, 10Hz to 100kHz)
  • High ripple rejection (68dB at 1kHz)
  • 1mA Quiescent current
  • No protection diodes needed
  • Controlled quiescent current in dropout
  • Adjustable output from 1.21 to 20V
  • <1µA Quiescent current in shutdown
  • Stable with 10µF ceramic output capacitor
  • Reverse-battery protection
  • Reverse current protection
  • Green product and no Sb/Br

Toepassingen

Industrial, Wireless, RF Communications

Waarschuwingen

This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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