Small-signal MOSFETs for portable applications
High volume small-signal MOSFETs for portable applications in WLCSP and leadless DFN packages
Small-signal MOSFETs
Small signal MOSFETs for portable applications such as relay drivers, switching circuits, DC/DC converters and more. Offering a wide range of package options from the smallest packages like DFN0606 and leadless ultra-thin DFN2020M-6. Optimum choices between N-Channel and P-Channel with a variety of RDS(on) ranges.
Key features
- Low threshold voltage
- Very fast switching
- Featuring the smallest DFN MOSFET in 0.63x0.33x0.25mm, and the leadless ultra-thin SMD DFN2020M-6 package
- Best-in-class low RDS(on)
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
- Battery switch
- Charging switch for portable devices
- DC-to-DC converters
- Power management in battery-driven portable devices
- Computing power management
PMPB07R3EN
30 V, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology with RDSon [max] @ VGS = 10 V (mΩ): 8.6 & RDSon [max] @ VGS = 4.5 V (mΩ): 12
PMCM4402UPE
20 V, P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology with RDSon [max] @ VGS = 4.5 V (mΩ): 80 & RDSon [max] @ VGS = 2.5 V (mΩ): 110
PMH600UNE
20 V, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology with RDSon [max] @ VGS = 4.5 V (mΩ): 620 & RDSon [max] @ VGS = 2.5 V (mΩ): 710
PMH260UNE
20 V, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology with RDSon [max] @ VGS = 4.5 V (mΩ): 310 & RDSon [max] @ VGS = 2.5 V (mΩ): 420
NX138BKH
60 V, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology with RDSon [max] @ VGS = 10 V (mΩ): 1600 & RDSon [max] @ VGS = 2.5 V (mΩ): 2700
PMCB60XN
30 V, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology with RDSon [max] @ VGS = 4.5 V (mΩ): 50 & RDSon [max] @ VGS = 2.5 V (mΩ): 65