200 U kunt nu voorraad reserveren
Hoeveelheid | |
---|---|
1+ | € 219,690 |
100+ | € 199,400 |
Productgegevens
Productoverzicht
HMC7950LS6TR is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), and monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low-noise amplifier that operates between 2GHz and 28GHz. This amplifier typically provides 15dB of gain, 2.0dB of noise figure, 26dBm of output IP3, and 16dBm of output power for 1dB gain compression, requiring 64mA from a 5V supply. The HMC7950 is self-biased with only a single positive supply needed to achieve a drain current, IDD, of 64mA. The HMC7950 also has a gain control option, VGG2. The HMC7950 amplifier input/outputs are internally matched to 50 ohm and dc blocked. Applications include test instrumentation, military and space.
- 50 ohm matched input/output, 5V typ supply voltage
- Total supply current is 64mA typical
- Frequency range from 2 to 5GHz
- Gain is 15.5dB typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Input return loss is 12dB typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Output return loss is 13dB typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Output power for 1dB compression is 16.5dBm typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Saturated output power is 20.5dBm typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Output third-order intercept is 26.5dBm typical at (2GHz to 5GHz frequency range, TA = 25°C)
- Operating temperature range from -40°C to +85°C, 16-terminal ceramic LCC-HS package
Technische specificaties
2GHz
16.5dB
16Pins
7V
85°C
28GHz
2.8dB
3V
-40°C
No SVHC (21-Jan-2025)
Technische documenten (2)
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:Philippines
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring