Diodes & Rectifiers | Farnell Netherlands

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New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET

TP65H035G4YS - gallium nitride (GaN) FET

RENESAS

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

ONSEMI

CoolSiC™ Trench MOSFET

CoolSiC™ Trench MOSFET

INFINEON

EconoDUAL™ 3 product family for medium power applications

EconoDUAL™ 3 product family for medium power applications

INFINEON

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

ANALOG DEVICES

New Toshiba SiC Schottky Barrier Diodes

New Toshiba SiC Schottky Barrier Diodes

TOSHIBA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

N-Channel Power MOSFET

N-Channel Power MOSFET

INFINEON

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode

NEXPERIA

You Decide. We Deliver.

You Decide. We Deliver.

Flexible delivery options now available.

NEXPERIA

PNU650200EJ (650 V, 20 A ultrafast recovery rectifier)

PNU650200EJ (650 V, 20 A ultrafast recovery rectifier)

Ahead of What’s Possible™ with Analog Devices

ANALOG DEVICES

Ahead of What’s Possible™ with Analog Devices