Reduced PricesOffersContact UsHelpTrack Ordersin het Nederlands
Register
0
0 Items€ 0.00
ex VAT
ex VAT

Bipolar Junction Transistor Arrays - BJT:

6 Products Found
View
Buyer
Engineer
Manufacturer
Transistor Polarity
Collector Emitter Voltage Max NPN
Collector Emitter Voltage Max PNP
Continuous Collector Current NPN
Continuous Collector Current PNP
Power Dissipation NPN
Power Dissipation PNP
DC Current Gain hFE Min NPN
DC Current Gain hFE Min PNP
Transistor Case Style
No. of Pins
Transistor Mounting
Operating Temperature Max
Transition Frequency NPN
Transition Frequency PNP
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
QST8TR
ROHM QST8TR
2965334

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. Dual PNP
  3. 12 V
  4. 1.5 A
Each (Supplied on Cut Tape)
Cut Tape
5+
€ 0.728
10+
€ 0.453
100+
€ 0.293
500+
€ 0.226
1000+
€ 0.204
Min: 5 / Mult: 5
Dual PNP
-
12V
-
1.5A
-
500mW
-
270hFE
SOT-457T
6Pins
Surface Mount
150°C
-
400MHz
QST8TR
ROHM QST8TR
2965334RL

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. Dual PNP
  3. 12 V
  4. 1.5 A
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
100+
€ 0.293
500+
€ 0.226
1000+
€ 0.204
Min: 100 / Mult: 5
Dual PNP
-
12V
-
1.5A
-
500mW
-
270hFE
SOT-457T
6Pins
Surface Mount
150°C
-
400MHz
US6T8TR
ROHM US6T8TR
4203194

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. Dual PNP
  3. 12 V
  4. 1.5 A
Each (Supplied on Cut Tape)
Cut Tape
3000+
€ 0.211
Min: 3000 / Mult: 3000
Dual PNP
-
12V
-
1.5A
-
1W
-
270hFE
SOT-363T
6Pins
Surface Mount
150°C
-
400MHz
QS6Z5TR
ROHM QS6Z5TR
4203187RL

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. NPN
  3. PNP
  4. 50 V
  5. 50 V
  6. 1 A
  7. 1 A
  8. 1.25 W
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
3000+
€ 0.306
Min: 3000 / Mult: 3000
NPN, PNP
50V
50V
1A
1A
1.25W
1.25W
180hFE
180hFE
SOT-457T
6Pins
Surface Mount
150°C
360MHz
400MHz
US6T8TR
ROHM US6T8TR
4203194RL

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. Dual PNP
  3. 12 V
  4. 1.5 A
Each (Supplied on Cut Tape)
Re-Reel
Packaging Options
3000+
€ 0.211
Min: 3000 / Mult: 3000
Dual PNP
-
12V
-
1.5A
-
1W
-
270hFE
SOT-363T
6Pins
Surface Mount
150°C
-
400MHz
QS6Z5TR
ROHM QS6Z5TR
4203187

Data Sheet

RoHS

Date/Lot Code

ROHM
  1. Bipolar Transistor Array
  2. NPN
  3. PNP
  4. 50 V
  5. 50 V
  6. 1 A
  7. 1 A
  8. 1.25 W
Each (Supplied on Cut Tape)
Cut Tape
3000+
€ 0.306
Min: 3000 / Mult: 3000
NPN, PNP
50V
50V
1A
1A
1.25W
1.25W
180hFE
180hFE
SOT-457T
6Pins
Surface Mount
150°C
360MHz
400MHz
1-6 of 6 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Visa
Mastercard
AMEX
Trade Account