Heeft u meer nodig?
Hoeveelheid | |
---|---|
1+ | € 0,695 |
10+ | € 0,517 |
100+ | € 0,398 |
500+ | € 0,349 |
1000+ | € 0,304 |
5000+ | € 0,250 |
Productgegevens
Productoverzicht
The IRFR024NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Toepassingen
Power Management
Waarschuwingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
N Channel
17A
TO-252AA
10V
45W
175°C
-
No SVHC (21-Jan-2025)
55V
0.075ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technische documenten (3)
Alternatieven voor IRFR024NTRPBF
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Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:China
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring