Heeft u meer nodig?
| Hoeveelheid | |
|---|---|
| 1+ | € 2,380 |
| 10+ | € 1,640 |
| 100+ | € 1,140 |
| 500+ | € 0,909 |
| 1000+ | € 0,900 |
| 5000+ | € 0,882 |
Productgegevens
Productoverzicht
The FDMS86101 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- 100% UIL tested
- 100% Rg tested
- Advance package and silicon combination for low RDS (ON) and high efficiency
Technische specificaties
N Channel
60A
Power 56
10V
104W
150°C
-
Lead (27-Jun-2024)
100V
8000µohm
Surface Mount
2.9V
8Pins
-
MSL 1 - Unlimited
Technische documenten (2)
Aanverwante producten
1 product gevonden
Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:China
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring