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3000+ | € 0,110 |
9000+ | € 0,106 |
Productgegevens
Productoverzicht
The 2N7002 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
- High density cell design for extremely low RDS (ON)
- High saturation current capability
- Voltage controlled small signal switch
- Rugged and reliable
Toepassingen
Power Management, Motor Drive & Control, Audio
Waarschuwingen
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technische specificaties
N Channel
115mA
SOT-23
10V
200mW
150°C
-
No SVHC (27-Jun-2024)
60V
7.5ohm
Surface Mount
2.1V
3Pins
-
MSL 1 - Unlimited
Technische documenten (2)
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Wetgeving en milieu
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerdLand van oorsprong:China
Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring