RAA2261104GNP#MA0

RAA226110 is a low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated and non-isolated topologies. The RAA226110 operates with a supply voltage from 6.5V to 18V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The RAA226110 provides 5.8V gate drive voltage (VDRV) generated by an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL connected to VEEL to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The RAA226110 IN/INB inputs can withstand voltages up to 18V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. Used in switching-mode power supply and GaN FET driver applications.

• Low-side GAN FET driver with programmable source current and adjustable overcurrent protection
• Up to 18V logic inputs (regardless of VDD level)
• Optimized to drive enhancement mode GaN FET
• Independent outputs for adjustable turn-on/turn-off speeds
• Source current programmable 0.3A, 0.75A, 2A
• Overcurrent protection with adjustable thresholds of 40mV, 80mV, 120mV
• Fault pin and overtemperature protection
• Flyback forward converters, boost and PFC converters
• Secondary synchronous FET drivers
• Industrial temperature range from -40°C to +125°C and is offered in a 16 lead QFN package