Heeft u meer nodig?
| Hoeveelheid | |
|---|---|
| 1+ | € 3,270 |
| 10+ | € 1,360 |
| 100+ | € 1,340 |
| 500+ | € 1,310 |
| 1000+ | € 1,300 |
| 5000+ | € 1,270 |
Productgegevens
Productoverzicht
The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications.
- Repetitive avalanche rated
- Reduced gate drive requirement
- 30V Enhanced VGS Rating
- Reduced CISS, COSS, CRSS
- Extremely high frequency operation
Toepassingen
Industrial, Power Management
Technische specificaties
N Channel
10A
TO-220AB
10V
125W
150°C
-
400V
0.55ohm
Through Hole
4V
3Pins
-
Lead (21-Jan-2025)
Technische documenten (2)
Alternatieven voor IRF740LCPBF
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Wetgeving en milieu
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Land waarin het laatste noemenswaardige fabricageproces is uitgevoerd
RoHS
RoHS
Conformiteitsverklaring