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GANB4R8-040CBAZ
Gallium Nitride (GaN) Transistor, 20 A, 15.8 nC, WLCSP, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 2.230 |
| 10+ | € 1.660 |
| 100+ | € 1.320 |
| 500+ | € 1.110 |
| 1000+ | € 1.050 |
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Multiple: 1
€ 2.23 (ex VAT)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGANB4R8-040CBAZ
Order Code4414365
Technical Datasheet
Drain Source Voltage Vds-
Continuous Drain Current Id20A
Drain Source On State Resistance-
Typical Gate Charge15.8nC
Transistor Case StyleWLCSP
Transistor MountingSurface Mount
No. of Pins22Pins
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
-
Drain Source On State Resistance
-
Transistor Case Style
WLCSP
No. of Pins
22Pins
Qualification
-
Continuous Drain Current Id
20A
Typical Gate Charge
15.8nC
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability