Print Page
PMV41XPAR
Power MOSFET, P Channel, 28 V, 4 A, 0.05 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMV41XPAR
Order Code4245896RL
Product RangeTrenchMOS Series
Technical Datasheet
873 In Stock
Need more?
EXPRESS Delivery Next Business Day
Order before 5pm
FREE Standard Delivery
on orders € 0.00 and above
Accurate delivery times will be calculated at checkout
| Quantity | Price (ex VAT) |
|---|---|
| 100+ | € 0.191 |
| 500+ | € 0.157 |
| 1000+ | € 0.148 |
| 5000+ | € 0.123 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
€ 24.10 (ex VAT)
A € 5.00 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV41XPAR
Order Code4245896RL
Product RangeTrenchMOS Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds28V
Continuous Drain Current Id4A
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchMOS Series
QualificationAEC-Q101
Product Overview
PMV41XPAR is a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, high-side load switch, and switching circuits.
- Low threshold voltage, very fast switching
- AEC-Q101 qualified
- Drain-source voltage is -28V max at Tj = 25°C
- Gate-source voltage is 12V maximum
- Drain current is -4A max at VGS = -4.5V; Tamb = 25°C
- Peak drain current is -38A max at Tamb = 25°C; single pulse; tp ≤ 10µs
- Total power dissipation is 510mW max at Tamb = 25°C
- Source current is -1.2A max at Tamb = 25°C
- Total gate charge is 14nC typ at VDS = -15V; ID = -4A; VGS = -4.5V; Tj = 25°C
- Ambient temperature range from -55 to 150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
28V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
TrenchMOS Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00017
Product traceability