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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP30N06L
Order Code2453442
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id32A
Drain Source On State Resistance0.027ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
- Low gate charge
- 100% Avalanche tested
- Low crss (typical 50pF)
- ±20V Gate-source voltage
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
32A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.027ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003039
Product traceability