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GD75HFU120C1S
IGBT Module, Half Bridge, 150 A, 3.1 V, 658 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD75HFU120C1S
Order Code3912066
Technical Datasheet
IGBT ConfigurationHalf Bridge
DC Collector Current150A
Continuous Collector Current150A
Collector Emitter Saturation Voltage Vce(on)3.1V
Collector Emitter Saturation Voltage3.1V
Power Dissipation658W
Power Dissipation Pd658W
Junction Temperature Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
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Technical Specifications
IGBT Configuration
Half Bridge
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
3.1V
Power Dissipation Pd
658W
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
3.1V
Power Dissipation
658W
Junction Temperature Tj Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15