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IPB80P03P4L07ATMA2
Power MOSFET, P Channel, 30 V, 80 A, 0.0056 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB80P03P4L07ATMA2
Order Code4319307
Product RangeOptiMOS-P2 Series
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB80P03P4L07ATMA2
Order Code4319307
Product RangeOptiMOS-P2 Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0056ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0056ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
OptiMOS-P2 Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001