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Quantity | Price (ex VAT) |
---|---|
1+ | € 1.320 |
10+ | € 0.923 |
100+ | € 0.702 |
500+ | € 0.566 |
1000+ | € 0.520 |
5000+ | € 0.446 |
Product Information
Product Overview
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
13A
TO-252AA
10V
66W
150°C
-
No SVHC (21-Jan-2025)
100V
0.205ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for IRFR5410TRPBF
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate