Notify me when back in stock
Quantity | Price (ex VAT) |
---|---|
1+ | € 2.850 |
10+ | € 2.440 |
25+ | € 2.250 |
50+ | € 2.180 |
100+ | € 2.110 |
250+ | € 2.070 |
500+ | € 2.030 |
1000+ | € 2.010 |
Product Information
Product Overview
The IRS2110SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Power Management
Technical Specifications
2Channels
High Side and Low Side
16Pins
Surface Mount
2.5A
10V
-40°C
130ns
-
MSL 3 - 168 hours
-
MOSFET
SOIC
Non-Inverting
2.5A
20V
125°C
120ns
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for IRS2110SPBF
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate