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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN180N15P
Order Code1427321
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id150A
Drain Source Voltage Vds150V
Drain Source On State Resistance0.011ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation680W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Encapsulating epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Fast recovery diode
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- High power density
- Easy to mount
- Space-saving s
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
Rds(on) Test Voltage
10V
Power Dissipation
680W
Product Range
-
Continuous Drain Current Id
150A
Drain Source On State Resistance
0.011ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.040823