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Quantity | Price (ex VAT) |
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1+ | € 1.850 |
10+ | € 1.040 |
100+ | € 0.944 |
500+ | € 0.779 |
1000+ | € 0.763 |
5000+ | € 0.748 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJE5742G
Order Code1653619
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400V
Power Dissipation Pd100W
DC Collector Current8A
RF Transistor CaseTO-220
No. of Pins3Pins
DC Current Gain hFE200hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJE5742G is a 8A NPN bipolar power Darlington Transistor designed for high voltage power switching in inductive circuits.
- Complementary to MJE5740
Applications
Industrial, Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
100W
RF Transistor Case
TO-220
DC Current Gain hFE
200hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
400V
DC Collector Current
8A
No. of Pins
3Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009253
Product traceability