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NXV65HR82DS2
MOSFET Transistor, N Channel, 26 A, 650 V, 0.073 ohm, 10 V, 5 V
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| Quantity | Price (ex VAT) |
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| 1+ | € 16.940 |
| 5+ | € 16.930 |
| 10+ | € 16.920 |
| 50+ | € 16.910 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXV65HR82DS2
Order Code3677748
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id26A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.073ohm
On Resistance Rds(on)0.073ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd126W
Power Dissipation126W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
26A
Drain Source On State Resistance
0.073ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
126W
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.073ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
126W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.5