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ManufacturerONSEMI
Manufacturer Part NoFDT86102LZ
Order Code2083341RL
Product RangePowerTrench
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDT86102LZ
Order Code2083341RL
Product RangePowerTrench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.022ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation2.2W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangePowerTrench
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
This N Channel MOSFET is produced using Fairchild Semiconductors advance PowerTrench® process that has been especially tailored to minimise the on state resistance and switch loss. G-S Zener has been added to enhance ESD voltage levels.
- Suitable for DC/DC conversion, inverter and synchronous rectifier
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.6A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
4Pins
Product Range
PowerTrench
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000217