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QS6M3TR
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.5 A, 1.5 A, 0.17 ohm
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230,615 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | € 0.771 |
| 10+ | € 0.470 |
| 100+ | € 0.340 |
| 500+ | € 0.240 |
| 1000+ | € 0.213 |
| 5000+ | € 0.187 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
€ 3.86 (ex VAT)
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Product Information
ManufacturerROHM
Manufacturer Part NoQS6M3TR
Order Code1525473
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.5A
Continuous Drain Current Id P Channel1.5A
Drain Source On State Resistance N Channel0.17ohm
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleTSMT
No. of Pins6Pins
Power Dissipation N Channel900mW
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The QS6M3TR is a N/P-channel MOSFET designed as low ON-resistance device by the micro-processing technologies useful for wide range of applications. This device is suitable for use with coin processing machines, handy type digital multi-meter, PLC (programmable logic controller) AC servo, network attached storage and DVR/DVS applications.
- 2.5V Drive
- Fast switching speed
- Small surface-mount package
- Low ON-resistance
- Built-in G-S protection diode
Applications
Industrial, Power Management, Portable Devices, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.5A
Drain Source On State Resistance P Channel
0.17ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.5A
Drain Source On State Resistance N Channel
0.17ohm
Transistor Case Style
TSMT
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000014