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R8002ANJFRGTL
Power MOSFET, N Channel, 800 V, 2 A, 3.3 ohm, TO-263S, Surface Mount
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| 10+ | € 0.916 |
| 100+ | € 0.898 |
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Product Information
ManufacturerROHM
Manufacturer Part NoR8002ANJFRGTL
Order Code3406514
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id2A
Drain Source On State Resistance3.3ohm
Transistor Case StyleTO-263S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation62W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCLead (23-Jan-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2A
Transistor Case Style
TO-263S
Rds(on) Test Voltage
10V
Power Dissipation
62W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001