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STB46NF30
Power MOSFET, N Channel, 300 V, 42 A, 0.063 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB46NF30
Order Code2807184
Product RangeSTripFET II
Technical Datasheet
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| 100+ | € 2.130 |
| 500+ | € 1.880 |
| 1000+ | € 1.740 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB46NF30
Order Code2807184
Product RangeSTripFET II
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id42A
Drain Source On State Resistance0.063ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET II
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
STB46NF30 is a N-channel STripFET™ II power MOSFET. It has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC/DC converter for telecom and computer applications, and applications with low gate charge driving requirements. Suitable for switching applications.
- Exceptional dv/dt capability, 100% avalanche tested, low gate charge
- 300V min drain-source voltage (VGS = 0V, ID = 1mA, TC = 25°C)
- 0.063ohm typ static drain-source on-resistance (VGS = 10V, ID = 17A, TC = 25°C)
- 42A drain current (continuous) at TC = 25°C, 300W total dissipation (TC = 25°C)
- 1oµA max zero gate voltage drain current (VGS = 0V, VDS = 300V, TC = 125°C)
- 3200pF typ input capacitance (VDS = 25V, f = 1MHz, VGS = 0V)
- 442pF typ output capacitance (VDS = 25V, f = 1MHz, VGS = 0V)
- 38ns typ rise time (VDD = 150V, ID = 17A, RG = 4.7ohm, VGS = 10V)
- 46ns typ fall time (VDD = 150V, ID = 17A, RG = 4.7ohm, VGS = 10V)
- D²PAK package, operating junction temperature range from -55 to 175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
42A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.063ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
STripFET II
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023
Product traceability