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SIA4263DJ-T1-GE3
Power MOSFET, P Channel, 20 V, 12 A, 0.017 ohm, PowerPAK SC-70, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIA4263DJ-T1-GE3
Order Code3927781
Product RangeTrenchFET Gen III Series
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA4263DJ-T1-GE3
Order Code3927781
Product RangeTrenchFET Gen III Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id12A
Drain Source On State Resistance0.017ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation15.6W
No. of Pins7Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
4.5V
Power Dissipation
15.6W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.017ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
7Pins
Product Range
TrenchFET Gen III Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability