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5+ | € 26.970 |
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50+ | € 22.720 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN140N30P
Order Code1427320
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id140A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation700W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN140N30P is a Polar™ N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers and high speed power switching applications.
- Avalanche rating
- Low Qg
- Low package inductance
- Easy to mount
- Space saving
Applications
Power Management, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Rds(on) Test Voltage
10V
Power Dissipation
700W
Product Range
-
Continuous Drain Current Id
140A
Drain Source On State Resistance
0.024ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03
Product traceability