Print Page
MRFE6VS25NR1
RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, TO-270
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VS25NR1
Order Code2776252RL
Technical Datasheet
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation-
Operating Frequency Min1.8MHz
Operating Frequency Max2000MHz
No. of Pins2Pins
Operating Temperature Max225°C
Product Range-
Product Overview
The MRFE6VS25NR1 is a N-channel RF Power LDMOS Transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
- High ruggedness
- Enhancement-mode lateral MOSFET
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit
Technical Specifications
Drain Source Voltage Vds
133VDC
Power Dissipation
-
Operating Frequency Max
2000MHz
Operating Temperature Max
225°C
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
No. of Pins
2Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003
Product traceability