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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | € 7.470 |
| 5+ | € 6.630 |
| 10+ | € 5.790 |
| 50+ | € 5.040 |
| 100+ | € 4.280 |
| 250+ | € 4.190 |
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€ 7.47 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH070N60EF-T1GE3
Order Code3263504
Product RangeEF
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id36A
Drain Source On State Resistance0.071ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation202W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeEF
Qualification-
SVHCNo SVHC (07-Nov-2024)
Product Overview
SIHH070N60EF-T1GE3 is an EF series power MOSFET with fast body diode. It features the 4th generation E series technology. Application includes server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID), fluorescent ballast lighting (lighting), welding, induction heating, motor drives, battery chargers and solar (PV inverters) (industrial).
- Low figure-of-merit (FOM) Ron x Qg, low effective capacitance (Co(er))
- Reduced switching and conduction losses, avalanche energy rated (UIS)
- Maximum power dissipation is 202W (TC = 25°C)
- Gate-source threshold voltage range from 3 to 5V (TJ = 25°C, VDS = VGS, ID = 250μA)
- Drain-source breakdown voltage is 600V (VGS = 0V, ID = 250μA, TJ = 25°C)
- Continuous drain current (TJ = 150 °C) is 36A (TC = 25°C, VGS at 10V)
- Turn-on delay time is 36ns, fall time is 38ns (typ, VDD = 480V, ID = 15A, VGS = 10V, Rg = 9.1ohm)
- Diode forward voltage is 1.2V (TJ = 25 °C, IS = 15A, VGS = 0V)
- PowerPAK 8 x 8 package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
36A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
202W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.071ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
8Pins
Product Range
EF
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates CompliantYes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004
Product traceability